Resistivity of normal metal microbridge in the magnetic field of single Abrikosov vortex
Creators
- 1. Inst. of Microelectronics Technology, USSR Academy of Sciences, Chernogolovka, Moscow District 142432 (USSR)
Description
This paper is aimed to attract attention to a possibility of recording a single Abrikosov vortex and study of it s motion in the microbridge-like structures. This has become possible by means of measurements of a change in the normal metal resistance which appears under the influence of a vortex magnetic field (MF). A structure under investigation: n+GaAS epilayer of the isolating substrate with a type-II superconducting film (Pb film of ∼103 Angstrom thickness) on top of it. Using the electron beam lithography the authors made in this structure a conducting channel with submicron dimensions shaped as a microbridge. Measured was the resistance of the normal metal - n+GaAs - in the magnetic field (the epilayer and superconductor were electrically isolated by the Schottky barrier). Without the superconducting film (upper layer) the authors observed a field dependence of the n-layer resistance. It is seen that in high magnetic fields there observed a periodical mesoscopic oscillations of the magnetoresistance which indicate, in particular, a submicron character of the structure. In low magnetic fields (<1 KOe) there observed a strong negative magnetoresistance caused by a weak localization. The latter is characterized by the inelastic length lφ ∼ 0.5 μm. The observed strong dependence of the resistance versus the MF (in low field) was used for vortex detection
Additional details
Publishing Information
- Publisher
- Nova Science Publishers, Inc.
- Imprint Place
- Commack, NY (United States)
- ISBN
- 0-941743-78-0
- Imprint Title
- Weak superconductivity
- Imprint Pagination
- 302 p.
- Journal Page Range
- p. 219-222.
Conference
- Title
- 5. Czechoslovak symposium on weak superconductivity.
- Dates
- 29 May - 2 Jun 1989.
- Place
- Smolenice (Czechoslovakia).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23077771
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABRIKOSOV THEORY; CURRENT DENSITY; DISLOCATION PINNING; ELECTRON BEAMS; ETCHING; GALLIUM ARSENIDES; MAGNETIC FIELDS; MAGNETIC FLUX; MAGNETORESISTANCE; N-TYPE CONDUCTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTIVITY; SUPERCONDUCTORS; VORTEX FLOW
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FLUID FLOW; GALLIUM COMPOUNDS; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS
Optional Information
- Secondary number(s)
- CONF-890557--.