Published 1987
| Version v1
Book
Photoemission study of the a-Si-H/a-SiOx:H and a-Si:H/a-SiN:H interface formation
- 1. Brookhaven Nat. Lab., Upton, NY
Description
The authors report a study of the interface formation between a-Si:H and a-SiOx:H or a-SiN:H in the coverage regime from a submonolayer to a few layers. The films were grown by plasma assisted CVD and characterized by photoemission. The authors' studies show that the growth mechanism is different for a-SiOx:H on a-Si:H than for a-Si:H on a a-Si:Ox:H. The growth of the a-SiNx:H/a-Si:H interface on the other hand is independent of the direction
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 0-931837-56-1
- Imprint Title
- Interfaces, superlattices, and thin films
- Imprint Pagination
- 811 p.
- Series
- Materials Research Society symposia proceedings. Volume 77.
- Journal Page Range
- p. 647-652.
Conference
- Title
- Materials Research Society symposium on interfaces, superlattices and thin films.
- Dates
- 1-6 Dec 1986.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21005665
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; HYDROGENATION; INTERFACES; SILICON; SILICON NITRIDES; SOLID-STATE PLASMA; THIN FILMS; X-RAY EMISSION ANALYSIS
- Descriptors DEC
- CHEMICAL ANALYSIS; CHEMICAL COATING; CHEMICAL REACTIONS; DEPOSITION; ELEMENTS; FILMS; NITRIDES; NITROGEN COMPOUNDS; NONDESTRUCTIVE ANALYSIS; PLASMA; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS; SURFACE COATING
Optional Information
- Secondary number(s)
- CONF-8612131--.