Electronic structure of antimonene grown on Sb₂Te₃ (111) and Bi₂Te₃ substrates

We explore the formation of single bilayer Sb(111) ultrathin film (Antimonene) on Bi₂Te₃ and Sb₂Te₃ substrates for the first time, which is theoretically predicated to be a robust trivial semiconductor but can be tuned to a 2D TI by reducing the buckling height. From angle-resolved photoemission spectroscopy measurements, the antimonene can be well grown on the two surfaces and shows clear band dispersion. The electronic structure of the antimonene shows similar character on the two surfaces, but due to the interfacial strain effect, the bands of antimonene on Bi₂Te₃ are flatter than on Sb₂Te₃, which attributes to Bi₂Te₃ substrate lattice constants lager than Sb₂Te₃. At the same time, the charge transfer effect is also observed through core level shift, which influences the band dispersion simultaneously