Published January 2011
| Version v1
Journal article
Germanium-based negative-index heterostructure for high speed modulation
Creators
- 1. Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304 (United States)
Description
We show that Ag/Ge/Ag 'fishnet'-like metal-semiconductor metamaterials can be designed to exhibit negative index material (NIM) behavior around 1.5 µm in spite of interband absorption in Ge becoming substantial in this region. We use the FDTD method with the Adachi model for an accurate account of the dielectric response in Ge. The system is expected to perform faster than Si-based fishnet, which is corroborated by preliminary data
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/26/1/014033Additional details
Identifiers
- DOI
- 10.1088/0268-1242/26/1/014033;
- PII
- S0268-1242(11)67687-0;
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 26
- Journal Issue
- 1
- Journal Page Range
- [3 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45010706
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; DIELECTRIC MATERIALS; GERMANIUM; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ELEMENTS; MATERIALS; METALS; SORPTION