Published June 30, 2004
| Version v1
Journal article
The defect-related photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 films
Creators
Description
We have studied the photoluminescence characteristics associated with the defects produced by Si+ ion-beam mixing of SiO2/Si/SiO2 films. The photoluminescence peaks show a strong dependence on annealing process before ion-beam mixing. Using electron spin resonance and X-ray photoelectron spectroscopy, the relationship between the photoluminescence peaks and the defects is discussed
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2004.03.234;
- PII
- S0169433204004866;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 233
- Journal Issue
- 1-4
- Journal Page Range
- p. 288-293
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36091612
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; DEFECTS; ELECTRON SPIN RESONANCE; ION BEAMS; PHOTOLUMINESCENCE; SILICON IONS; SILICON OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; ELECTRON SPECTROSCOPY; EMISSION; HEAT TREATMENTS; IONS; LUMINESCENCE; MAGNETIC RESONANCE; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; RESONANCE; SILICON COMPOUNDS; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.