Published 1987
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Performance of GaAs and silicon concentrator cells under 37 MeV proton irradiation
Description
Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 37 MeV protons at fluences up to 2.8 x 10 to the 12th protons/sq cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150 x AMO. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short circuit current and irradiance. The cells are 5 x 5 mm with a 4-mm diameter illuminated area
Availability note (English)
Available from NTIS, PC A02/MF A01.
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Additional details
Publishing Information
- Imprint Pagination
- 10 p.
- Report number
- N--88-12877
Conference
- Title
- 19. IEEE photovoltaic specialists conference.
- Dates
- 4-8 May 1987.
- Place
- New Orleans, LA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19075991
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- IRRADIATION; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON SOLAR CELLS; SOLAR CELLS
- Descriptors DEC
- BEAMS; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; EQUIPMENT; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS
Optional Information
- Secondary number(s)
- NASA-TM--100144; E--3696; NAS--1.15:100144; CONF-870528--.