Published 1998
| Version v1
Miscellaneous
Temperature dependence of energy band gap of Zn1-xMgxSe strained epitaxial layers grown on GaAs
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- thin films
Publishing Information
- ISBN
- 83-901181-0-6
- Imprint Title
- Abstracts of International Conference on Solid State Crystals - Materials Science and Applications
- Imprint Pagination
- 268 p.
- Journal Page Range
- p. 210
Conference
- Title
- International Conference on Solid State Crystals - Materials Science and Applications
- Dates
- 12-16 Oct 1998
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31044476
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- CHEMICAL COMPOSITION; ENERGY GAP; GALLIUM ARSENIDES; LATTICE PARAMETERS; MAGNESIUM COMPOUNDS; MEETINGS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELENIDES; STRAINS; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; ZINC COMPOUNDS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; FILMS; GALLIUM COMPOUNDS; LUMINESCENCE; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SELENIUM COMPOUNDS
Optional Information
- Notes
- 3 refs