Structure and ferroelectric properties of ferroelectromagnetic YMnO3 thin films prepared by pulsed laser deposition
- 1. Materials Science and Engineering Department, Nanjing University, Nanjing 210093 (China)
- 2. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
- 3. Physics Department, Nanjing University, Nanjing 210093 (China)
Description
Ferroelectromagnetic YMnO3 thin films have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique. It is found that only these films deposited in 10-3 Pa O2 and annealed in N2 ambient were well crystallized to a hexagonal YMnO3 single phase. Furthermore, the crystallization texture of YMnO3 thin films significantly depends on the post-annealing method. YMnO3 thin film with (004) preferred orientation was fabricated by crystallizing an amorphous YMnO3 film deposited at 650 C using a rapid thermal annealing process. This c-oriented YMnO3 film shows an excellent ferroelectric polarization with remanent polarization (2Pr) of 0.52 μC/cm2 at an applied electric field of 300 kV/cm, whereas the film crystallized by conventional furnace annealing is (110) oriented and shows a poor ferroelectric polarization. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssa.200306747Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. A, Applied Research
- Journal Volume
- 201
- Journal Issue
- 3
- Journal Page Range
- p. 497-501
- ISSN
- 0031-8965
- CODEN
- PSSABA
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 35031242
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; FERROELECTRIC MATERIALS; HEXAGONAL LATTICES; HYSTERESIS; MANGANATES; PLATINUM; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON OXIDES; SUBSTRATES; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; TITANIUM OXIDES; X-RAY DIFFRACTION; YTTRIUM COMPOUNDS
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; FILMS; HEAT TREATMENTS; MANGANESE COMPOUNDS; MATERIALS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PLATINUM METALS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- With 3 figs., 19 refs.. SICI: 0031-8965(200402)201:3<497::AID-PSSA200306747>3.0.TX;2-1