Formation of TiSi2 and shallow junction by As+ ion beam mixing and infrared rapid heat treatment

A novel technique to form shallow junctions with low-resistance silicide contact has been developed for use in VLSI with scaled MOSFETs. The new salicide (self-aligned silicide) MOSFET is featured by the gate and the source-drain region being refractory silicided in a self-alignment manner, and the gate and the source-drain region are isolated from one another without any insulating spacers on the gate sides. A critical step in such MOSFET fabrication process is the ion implantation through metal (ITM) silicidation technique, which includes As+ ion beam-induced titanium-silicon interface mixing and infrared rapid heat treatment to form the n+p junction and its high-quality TiSi2 contact layer simultaneously. (author)