ESD protection design for the gate oxide of an RF-LDMOS

This paper presents the investigation of integrated electro-static discharge (ESD) protection design for the gate oxide of an RF-LDMOS (radio frequency lateral double diffusion MOS). Through a comprehensive discussion of experimental and simulated results, a cascoded NMOS is presented as appropriate integrated gate oxide ESD protection with a high holding voltage and a flexible ESD design window. (semiconductor devices)