Annealing study of NTD silicon doped with boron

Two silicon samples containing approximately 1 X 1015 B-cm-3 have been transmutation doped to phosphorus concentrations of 1 X 1013 and 1 X 1015 P-cm-3. For each sample, the infrared absorption properties in the spectral region 4000 to 200 cm-1 have been studied as a function of annealing temperature. The samples were isochronally annealed from 2000 C to 10000 C in steps of 1000 C. After each annealing step, absorption data were taken at room temperature and 10 K. For each annealing step, the optical activation of the phosphorus and boron, as well as the removal or formation of defect lines, is reported