Giant magnetoresistance in the variable-range hopping regime
Creators
- 1. Université Pierre et Marie Curie, LPTHE (France)
- 2. University of Washington, Department of Physics (United States)
Description
We predict the universal power-law dependence of the localization length on the magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as the directed polymer problem even in the case of wave functions of random sign. We present numerical simulations that prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of the magnetic field
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Experimental and Theoretical Physics
- Journal Volume
- 117
- Journal Issue
- 3
- Journal Page Range
- p. 551-569
- ISSN
- 1063-7761
- CODEN
- JTPHES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45031394
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- COMPUTERIZED SIMULATION; ELECTRONS; FUNCTIONS; INTERFERENCE; LENGTH; MAGNETIC FIELDS; MAGNETORESISTANCE; POLYMERS; RANDOMNESS; SPIN; SPIN ORIENTATION; TUNNEL EFFECT
- Descriptors DEC
- ANGULAR MOMENTUM; DIMENSIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; ORIENTATION; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; SIMULATION
Optional Information
- Copyright
- Copyright (c) 2013 Pleiades Publishing, Inc.
- Notes
- http://www.springer-ny.com