Published July 2002
| Version v1
Journal article
Development of large area silicon semiconductor detectors for use in the current mode
Creators
- 1. Fudan Univ., Shanghai (China). Inst. of Modern Physics
- 2. northwestern Inst. of Nuclear Technology, Xi'an (China)
- 3. China Academy of Engineering Physics, Mianyang (China). Inst. of Electronic Engineering
Description
Large area silicon semiconductor detectors for use in the current mode, with their dimensions of φ40, φ50 and φ60 mm, their depletion thickness of 200-300 μm, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, authors' large PIN detectors can serve both as reliable and efficient high-resolution devices for nuclear counting experiments, as well as monitors of high-intensity radiation fields in the current mode under a bias of 100-1000 V, while the detectors commercially available are only for the counting use
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 51
- Journal Issue
- 7
- Journal Page Range
- p. 1502-1505
- ISSN
- 1000-3290
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 34068303
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DEPLETION LAYER; MONITORS; PERFORMANCE; SEMICONDUCTOR DETECTORS; SILICON; THICKNESS; USES
- Descriptors DEC
- DIMENSIONS; ELEMENTS; LAYERS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMIMETALS