Published July 2002 | Version v1
Journal article

Development of large area silicon semiconductor detectors for use in the current mode

  • 1. Fudan Univ., Shanghai (China). Inst. of Modern Physics
  • 2. northwestern Inst. of Nuclear Technology, Xi'an (China)
  • 3. China Academy of Engineering Physics, Mianyang (China). Inst. of Electronic Engineering

Description

Large area silicon semiconductor detectors for use in the current mode, with their dimensions of φ40, φ50 and φ60 mm, their depletion thickness of 200-300 μm, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, authors' large PIN detectors can serve both as reliable and efficient high-resolution devices for nuclear counting experiments, as well as monitors of high-intensity radiation fields in the current mode under a bias of 100-1000 V, while the detectors commercially available are only for the counting use

Additional details

Publishing Information

Journal Title
Acta Physica Sinica
Journal Volume
51
Journal Issue
7
Journal Page Range
p. 1502-1505
ISSN
1000-3290

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
34068303
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
DEPLETION LAYER; MONITORS; PERFORMANCE; SEMICONDUCTOR DETECTORS; SILICON; THICKNESS; USES
Descriptors DEC
DIMENSIONS; ELEMENTS; LAYERS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMIMETALS