Published 1997 | Version v1
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The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

Description

We describe the metal-organic chemical vapor deposition os InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 degrees C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH3, and PH3. By changing the layer thickness and composition we have prepared structures with low temperature (≤20K) photoluminescence wavelengths ranging from 3.2 to 5.0 μm. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS layers. An InAsSb/InAsP SLS injection laser emitted at 3.3 μm at 80 K with peak power of 100 mW

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Available from INIS in electronic form and/or on microfiche ; Also available from OSTI as DE98000048; NTIS; US Govt. Printing Office Dep.

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Additional details

Publishing Information

Imprint Pagination
5 p.
Report number
SAND--97-2166C

Conference

Title
24. international symposium on compound semiconductors.
Dates
7-11 Sep 1997.
Place
San Diego, CA (United States).

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