Efficiency of defect formation in n-type Si under 1 MeV electron irradiation

Dependence of defect introduction efficiency (DIE) on electron irradiation intensity for silicon crystals, irradiated at 77 K, and DIE changes with the changing of crystal temperature and doping degree are studied. Electron energy is 1 MeV, pulse duration - 3 mcs. Hall voltage and conductivity of samples before and after irradiation, after annealing up to indoor temperature were measured, and concentration of acceptors introduced by irradiation was determined. Linear dependence of DIE on radiation intensity logarithm or on charge carrier concentration (which is equivalent) is shown. The experimental results presented confirm the necessity of acconting of Frenkel pair component shielding by free carriers in the process of radiation defect accumulation