Published February 2002 | Version v1
Journal article Metadata-only

Photoelectronic spectroscopy of InAs/GaAs quantum dot heterostructures in semiconductor/electrolyte system

Creators

  • 1. Nizhegorodskij Gosudarstvennyj Univ. im. N.I. Lobachevskogo, Nizhnij Novgorod (Russian Federation)

Description

The photoelectric spectroscopy in the semiconductor/electrolyte system expands the possibilities of photoelectric diagnostics of heterostructures with the InAs/GaAs quantum dots. It makes it possible to determine the energy spectrum of the quantum dots with low concentration of the surface quantum dots, to study in situ the processes of formation and passivation of traps in the near-the-surface area of the hetero-nano-structures

Abstract (Russian)

Фотоэлектрическая спектроскопия в системе полупроводник/электролит расширяет возможности фотоэлектрической диагностики гетероструктур с квантовыми точками InAs/GaAs. Она позволяет определять энергетический спектр квантовых точек с низкой концентрацией поверхностных квантовых точек, исследовать in situ процессы образования и пассивации ловушек в приповерхностной области гетеронаноструктур

Additional details

Additional titles

Original title (Russian)
Фотоэлектрическая спектроскопия гетероструктур с квантовыми точками InAs/GaAs в системе полупроводник/электролит

Publishing Information

Journal Title
Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
Journal Volume
66
Journal Issue
2
Journal Page Range
p. 187-189
ISSN
1026-3489
CODEN
IRAFEO

Conference

Title
Nanophotonics workshop
Original Conference Title
Soveshchanie Nanofotonika
Dates
Mar 2001
Place
Nizhnij Novgorod (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
34014614
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRIC FIELDS; ELECTROLYTES; EMISSION SPECTRA; ENERGY SPECTRA; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTOR MATERIALS; TRAPS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTRON SPECTROSCOPY; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SPECTRA; SPECTROSCOPY

Optional Information

Notes
9 refs., 3 figs.