Fabrication of multi-electrode array platforms for neuronal interfacing with bi-layer lift-off resist sputter deposition

We report a bi-layer lift-off resist (LOR) technique in combination with sputter deposition of silicon dioxide (SiO₂) as a new passivation method in the fabrication of a multi-electrode array (MEA). Using the photo-insensitive LOR as a sacrificial bottom layer and the negative photoresist as a patterning top layer, and performing low-temperature sputter deposition of SiO₂ followed by lift-off, we could successfully fabricate damage-free indium-tin oxide (ITO) and Au MEA. The bi-layer LOR sputter deposition processed Au MEA showed an impedance value of 6 × 10⁵ Ω (at 1 kHz), with good consistency over 60 electrodes. The passivation performance of the bi-layer LOR sputter-deposited SiO₂ was tested by electrodepositing Au nanoparticles (NPs) on the Au electrode, resulting in the well-confined and uniformly coated Au NPs. The bi-layer LOR sputter deposition processed ITO, Au, and Au NP-modified MEAs were evaluated and found to have a neuronal spike recording capability at a single unit level, confirming the validity of the bi-layer LOR sputter deposition as an effective passivation technique in fabrication of a MEA. These results suggest that the damage-free Au MEA fabricated with bi-layer LOR sputter deposition would be a viable platform for screening surface modification techniques that are available in neuronal interfacing. (technical note)