Published August 1, 2007 | Version v1
Journal article

On the interaction between a vacancy and interstitial loops in metals

  • 1. Universitat Politecnica de Catalunya, Barcelona (Spain)
  • 2. Universidad Complutense de Madrid (ES)
  • 3. Universitat Politecnica de Catalunya, Barcelona (ES)
  • 4. Oak Ridge National Laboratory, TN (US)
  • 5. University of Liverpool (GB)

Description

Atomic-scale computer simulation is used to study interaction between a vacancy and clusters of self-interstitial atoms in metals with hcp, fcc and bcc crystal structure: -zirconium, copper and -iron. Effects of cluster size, atomic structure, dislocation nature of the cluster side and temperature are investigated. A vacancy can recombine with any interstitial in small clusters and this does not affect cluster mobility. In large clusters interaction depends on whether the cluster sides dissociate into partial dislocations. A vacancy recombines only on undissociated sides and corners created with undissociated segments. Vacancies inside the cluster perimeter do not recombine but restrict cluster mobility. Temperature enhances recombination by either increasing the number of recombination sites or assisting vacancy diffusion towards such sites. The results are relevant to differences in bcc, fcc and hcp metals microstructure evolution under irradiation observed experimentally and studied by theoretical or higher level modelling techniques.

Additional details

Publishing Information

Journal Title
Philosophical Magazine (2003, Print)
Journal Volume
87
Journal Issue
23
Journal Page Range
p. 3501-3517
ISSN
1478-6435

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
41113205
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ATOMS; COMPUTERIZED SIMULATION; COPPER; CRYSTAL STRUCTURE; DIFFUSION; DISLOCATIONS; INTERSTITIALS; IRON; IRRADIATION; MICROSTRUCTURE; RECOMBINATION; VACANCIES; ZIRCONIUM
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; LINE DEFECTS; METALS; POINT DEFECTS; SIMULATION; TRANSITION ELEMENTS

Optional Information

Contract/Grant/Project number
KC0201010; ERKCM01; AC05-00OR22725
Funding organization
SC USDOE - Office of Science (United States)