Published March 15, 2007 | Version v1
Journal article

Thermal stability of nitrogen-doped SrTiO3 films: Electronic and optical properties studies

  • 1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technology University, Singapore 637616 (Singapore)
  • 2. Institute of Materials Research and Engineering, Singapore 117602 (Singapore)
  • 3. Department of Physics, National University of Singapore, Singapore 117542 (Singapore)
  • 4. Freescale Semiconductor Inc., Tempe, Arizona 85284 (United States)

Description

The thermal stability of nitrogen-doped SrTiO3 (001) films in terms of electronic and optical properties has been studied by using x-ray photoemission spectroscopy, x-ray absorption spectroscopy, and spectroscopic ellipsometry techniques. The chemical states of nitrogen in nitrogen-doped SrTiO3 films include both substitutional and interstitial states. The N 2p states localized above the O 2p-derived valence band maximum are attributed to the change of optical properties. Postannealing will induce the valence band edge shift due to the thermal instability of interstitial N states, which may degrade the photocatalysis of nitrogen-doped SrTiO3 films during applications

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
101
Journal Issue
6
Journal Page Range
p. 063708-063708.5
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2007 American Institute of Physics