Published October 2018 | Version v1
Journal article Metadata-only

Stability of porous SiC based materials under relevant conditions of radiation and temperature

Creators

  • 1. CIEMAT, National Fusion Laboratory, 28040, Madrid (Spain)
  • 2. Ceit-IK4 Technology Center and TECNUN (University of Navarra), 20018, San Sebastian (Spain)

Description

Highlights: • Electrical conductivity of porous SiC samples before, after and during ionizing radiation is in all cases bellow the maximum acceptable for FCI. • Crystalline phase modification during irradiation which might cause mechanical issues has been observed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jnucmat.2018.06.009

Additional details

Identifiers

DOI
10.1016/j.jnucmat.2018.06.009;
PII
S0022311518301764;

Publishing Information

Journal Title
Journal of Nuclear Materials
Journal Volume
509
Journal Page Range
p. 54-61
ISSN
0022-3115
CODEN
JNUMAM

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49103200
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRIC CONDUCTIVITY; IONIZING RADIATIONS; IRRADIATION; MODIFICATIONS; NANOSTRUCTURES; POROUS MATERIALS; RADIATION EFFECTS; SILICON CARBIDES
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; ELECTRICAL PROPERTIES; MATERIALS; PHYSICAL PROPERTIES; RADIATIONS; SILICON COMPOUNDS

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.