ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates
Creators
- 1. Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)
- 2. Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China) and Institute of MEMS Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)
- 3. Department of Electronics Engineering, Southern Taiwan University of Technology, Tainan 710, Taiwan (China)
- 4. Institute of MEMS Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)
- 5. Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan (China)
Description
Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 x 10-13 W and the maximum normalized detectivity (D *) of 9.3 x 1011 cm Hz0.5 W-1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D * of the heteroepitaxial ZnSe photodetector were 2.9 x 10-12 W and 2.44 x 1011 cm Hz0.5 W-1, respectively
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2005.03.002;
- PII
- S0921-5107(05)00173-X;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 119
- Journal Issue
- 2
- Journal Page Range
- p. 202-205
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37114581
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CURRENTS; GALLIUM ARSENIDES; METALS; MOLECULAR BEAM EPITAXY; NOISE; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS; SUBSTRATES; TUNGSTEN IONS; WAVELENGTHS; ZINC SELENIDES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; CURRENTS; EFFICIENCY; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; IONS; MATERIALS; PNICTIDES; SELENIDES; SELENIUM COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.