Published June 1989
| Version v1
Journal article
Formation of conducting layers under irradiation of silicon surface by boron laser plasma and following annealing
Description
Formation dynamics of p-Si layers is investigated under irradiation of silicon surface (T=600 deg C) by high-power pulse flux of boron erosive laser plasma (B) is investigated. Effect of radiation-induced acceleration of B diffusion deep in Si is determined. Alloyage dynamics for irradiated structures at annealing is investigated. Several peculiarities of Si alloyage from superthin film source, which are linked with the effect of silicon natural oxide layer and of annealing atmosphere, are determined. Dependence of carrier surface concentration on irradiation dose is defined
Additional details
Additional titles
- Original title (Russian)
- Формирование проводящих слоев при облучении поверхности кремния лазерной плазмой бора и при последующем отжиге
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 23
- Journal Issue
- 6
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 964-967
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 21080925
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; BORON; CARRIER DENSITY; CRYSTAL DOPING; CRYSTALS; DEPTH; DIFFUSION; EV RANGE 100-1000; P-TYPE CONDUCTORS; RADIATION DOSES; SILICON; SPATIAL DISTRIBUTION; SURFACES; TIME DEPENDENCE; VERY HIGH TEMPERATURE
- Descriptors DEC
- DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; EV RANGE; HEAT TREATMENTS; MATERIALS; SEMICONDUCTOR MATERIALS; SEMIMETALS