Photoluminescence properties of β-SiAlON:Yb2+, a novel green-emitting phosphor for white light-emitting diodes
Creators
- 1. Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201 (China)
- 2. Nitride Particle Group, Nano Ceramics Center, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan)
- 3. Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials and Metallurgy, Northeastern Univrsity, Shenyang, Liaoning, 110004 (China)
Description
We have synthesized Yb2+-activated Si6-zAlzOzN8-z (0.05≤z≤2.3, 0.03 mol% ≤Yb2+≤0.7 mol%) green phosphors by solid-state reaction at 1900 deg. C for 2 h under a nitrogen pressure of 1.0 MPa. Phase purity, photoluminescence and its thermal quenching were investigated. A single phase was obtained for all values of z and Yb2+ concentration. A distinct emission band was observed at 540 nm originating from the 5d-4f electronic transition in Yb2+ under 480 nm excitation. The photoluminescence properties mainly depended on the Yb2+ concentration and chemical composition of the matrix. The resultant phosphor showed high thermal stability, that is, the emission intensity at 150 deg. C was about 82% of that measured at room temperature. The experimental results indicate that β-SiAlON:Yb2+ is a potential green phosphor for white light-emitting diodes (LEDs), which use blue LEDs as the primary light source.
Availability note (English)
Available from http://dx.doi.org/10.1088/1468-6996/12/3/034404Additional details
Identifiers
Publishing Information
- Journal Title
- Science and Technology of Advanced Materials
- Journal Volume
- 12
- Journal Issue
- 3
- Journal Page Range
- [6 p.]
- ISSN
- 1468-6996
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43013025
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; CHEMICAL COMPOSITION; EXCITATION; LIGHT EMITTING DIODES; LIGHT SOURCES; NITROGEN; PHOSPHORS; PHOTOLUMINESCENCE; QUENCHING; SILICON NITRIDES; YTTERBIUM IONS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; IONS; LUMINESCENCE; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; RADIATION SOURCES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS