Contribution to modelling sputtering by ion beams

From ion-matter interaction results, we have modelized sputtering by ion beams, for energies around 1 keV, in linear collisions regime, according to three approaches: analytic, semi-empiric and simulated. Some corrections to analytic approach have given better agreement to experiment. Semi-empiric approach predictions, compared to experiment, have given satisfactory results for mono-element target. Some input parameters, for used simulated program, have been proposed, for mono-elements, semi-conductives and binaries oxide targets. An iterative simulated model, validated by experiment, has deal with oxide steady targets. To predict deposited thickness profile on static then dynamic substrates, a simulated model, leaning on geometric considerations, has been brought into focus, compared to experiment and has given some satisfactories qualitative in truth quantitative results. With this proposed model, we can search for the best geometry to realize thin films deposition with very homogeneous thickness on large diameter substrates in I.B.S. and D.I.B.S. technics. (orig.)