Published July 1994
| Version v1
Journal article
Effect of rare earth impurities on the photoelectric properties of germanium telluride amorphous films
- 1. L'vovskij Gosudarstvennyj Univ., Lvov (Ukraine)
- 2. AN SSSR, Moscow (Russian Federation). Inst. Obshchej i Neorganicheskoj Khimii
Description
Amorphous semiconducting films of (GeTe)1-xRx compositions (R - Y, Gd, Tb) are investigated. It is shown that introduction of Y, Gd, Tb impurities in quantities x < 0.03 leads to a 5-10 time increase of photoconductivity of GeTe amorphous films
Additional details
Additional titles
- Original title (Russian)
- Влияние примесей редкоземельных элементов на фотоэлектрические свойства аморфных пленок теллурида германия
Publishing Information
- Journal Title
- Neorganicheskie Materialy
- Journal Volume
- 30
- Journal Issue
- 7
- Journal Page Range
- p. 894-897.
- ISSN
- 0002-337X
- CODEN
- NEOMB8
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26020230
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; ELECTRIC CONDUCTIVITY; FILMS; GADOLINIUM ADDITIONS; GERMANIUM ALLOYS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SEMICONDUCTOR MATERIALS; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE; TERBIUM ADDITIONS; YTTRIUM ADDITIONS
- Descriptors DEC
- ALLOYS; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; MATERIALS; PHYSICAL PROPERTIES; RARE EARTH ADDITIONS