Published 1996
| Version v1
Book
The role of glass structure in the formation of implanted gold nanoclusters for enhanced nonlinear optical properties
- 1. Consultants International, Tijeras, NM (United States)
- 2. Unita INFM, Venezia (Italy). Dipt. di Chimica Fisica
- 3. Unita INFM, Padova (Italy). Dipt. di Fisica (Italy)
Description
Various silicate glasses were implanted with 8 x 1015 285 keV Au/cm2. Colloid growth was monitored as a function of annealing and N implantation (2 x 1017 35 keV N/cm2). Annealing to 1,040 C for fused silica and to 600 C for the other glasses resulted in Au aggregation and optical absorption. Radiation damage removal is associated with the fused silica annealing; the aggregation of Au at lower temperatures for the other glasses is expected because of the lower glass transition temperature. Phase-separation in the alkali-borosilicates may be important because of grain-boundary diffusion. N implantation did not significantly affect nanocluster growth
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-299-5
- Imprint Title
- Ion-solid interactions for materials modification and processing
- Imprint Pagination
- 923 p.
- Series
- Materials Research Society symposium proceedings, Volume 396.
- Journal Page Range
- p. 397-402.
Conference
- Title
- Fall meeting of the Materials Research Society (MRS).
- Dates
- 27 Nov - 1 Dec 1995.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28049043
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- CRYSTAL DOPING; EXPERIMENTAL DATA; GLASS; GOLD IONS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; SILICATES
- Descriptors DEC
- CHARGED PARTICLES; DATA; INFORMATION; IONS; NUMERICAL DATA; OXYGEN COMPOUNDS; RADIATION EFFECTS; SILICON COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-951155--.