Interaction of interfaces between YBa2Cu3O7-δ single crystals and Si, SiC and SiO2

Interaction on the interface of a monocrystal with Si, SiC, SiO2 films deposited on it is investigated by the Auger analysis together with ion deposition. Processing of Auger spectra is carried out by the method of factor analysis. Reaction on the interface consists in formation of barium silicate layer and products of YBa2Cu3O7-δ-phase decay. At temperature below 500 deg C interaction on the interface is not detected. Main diffusing elements are barium and oxygen. Diffusion is the limiting stage of the process. Numerical estimations of the diffusion coefficient and activation energy are presented