Published January 18, 2016 | Version v1
Journal article

Near-ultraviolet micro-Raman study of diamond grown on GaN

  • 1. Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, Texas 78666 (United States)
  • 2. Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)
  • 3. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States)
  • 4. Element Six Technologies, U.S. Corporation, Santa Clara, California 95054 (United States)

Description

Ultraviolet (UV) micro-Raman measurements are reported of diamond grown on GaN using chemical vapor deposition. UV excitation permits simultaneous investigation of the diamond (D) and disordered carbon (DC) comprising the polycrystalline layer. From line scans of a cross-section along the diamond growth direction, the DC component of the diamond layer is found to be highest near the GaN-on-diamond interface and diminish with characteristic length scale of ∼3.5 μm. Transmission electron microscopy (TEM) of the diamond near the interface confirms the presence of DC. Combined micro-Raman and TEM are used to develop an optical method for estimating the DC volume fraction

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
108
Journal Issue
3
Journal Page Range
p. 031901-031901.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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