Published 1995 | Version v1
Journal article

High resolution x-ray diffractometry and topography of float-zone GaAs crystals grown in microgravity

  • 1. Bede Scientific Instruments, Durham (United Kingdom)
  • 2. Isfahan Univ. of Technology (Iran, Islamic Republic of)
  • 3. Daresbury Laboratory, Warrington (United Kingdom)

Description

High resolution Bragg-case X-ray double and triple axis diffractometry and Laue-case white beam synchrotron X-ray topography experiments have been performed on undoped [001] oriented float-zone GaAs crystals have been grown under microgravity conditions in space on the D2 mission. Near the seed, excellent anomalous transmission was achieved and a clear cellular structure of dislocations observed. The double and triple axis rocking curves were comparable with those from semi-insulating terrestrial material. Following a heater failure, the molten zone height dropped and reciprocal space maps revealed a long ridge of scatter transverse to the diffraction vector direction. This corresponds to the presence of a distribution of sub-grains containing little internal strain. Continued growth resulted in twin formation. 6 refs., 5 figs., 1 tab

Additional details

Publishing Information

Journal Title
Advances in X-Ray Analysis
Journal Volume
38
Journal Page Range
p. 195-200.
ISSN
0376-0308
CODEN
AXRAAA

Conference

Title
43. annual Denver x-ray conference on applications of x-ray analysis.
Dates
1-5 Aug 1994.
Place
Steamboat Spring, CO (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
27080331
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL GROWTH; GALLIUM ARSENIDES; TOPOGRAPHY; X-RAY DIFFRACTION; X-RAY DIFFRACTOMETERS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; DIFFRACTOMETERS; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; PNICTIDES; SCATTERING

Optional Information

Secondary number(s)
CONF-9408178--.