High resolution x-ray diffractometry and topography of float-zone GaAs crystals grown in microgravity
- 1. Bede Scientific Instruments, Durham (United Kingdom)
- 2. Isfahan Univ. of Technology (Iran, Islamic Republic of)
- 3. Daresbury Laboratory, Warrington (United Kingdom)
Description
High resolution Bragg-case X-ray double and triple axis diffractometry and Laue-case white beam synchrotron X-ray topography experiments have been performed on undoped [001] oriented float-zone GaAs crystals have been grown under microgravity conditions in space on the D2 mission. Near the seed, excellent anomalous transmission was achieved and a clear cellular structure of dislocations observed. The double and triple axis rocking curves were comparable with those from semi-insulating terrestrial material. Following a heater failure, the molten zone height dropped and reciprocal space maps revealed a long ridge of scatter transverse to the diffraction vector direction. This corresponds to the presence of a distribution of sub-grains containing little internal strain. Continued growth resulted in twin formation. 6 refs., 5 figs., 1 tab
Additional details
Publishing Information
- Journal Title
- Advances in X-Ray Analysis
- Journal Volume
- 38
- Journal Page Range
- p. 195-200.
- ISSN
- 0376-0308
- CODEN
- AXRAAA
Conference
- Title
- 43. annual Denver x-ray conference on applications of x-ray analysis.
- Dates
- 1-5 Aug 1994.
- Place
- Steamboat Spring, CO (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27080331
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL GROWTH; GALLIUM ARSENIDES; TOPOGRAPHY; X-RAY DIFFRACTION; X-RAY DIFFRACTOMETERS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; DIFFRACTOMETERS; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; PNICTIDES; SCATTERING
Optional Information
- Secondary number(s)
- CONF-9408178--.