Published 1996 | Version v1
Book Metadata-only

Effects of arsenic deactivation on arsenic-implant induced enhanced diffusion in silicon

Creators

  • 1. Univ. of Florida, Gainesville, FL (United States). Dept. of Electrical Engineering
  • 2. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science

Description

The enhanced diffusion of boron due to high dose arsenic implantation into silicon is studied as a function of arsenic dose. The behavior of both the type-V and end-of-range loops is investigated by transmission electron microscopy (TEM). The role of arsenic deactivation induced interstitials and type-V loops on enhanced diffusion is assessed. Reduction of the boron diffusivity is observed with increasing arsenic dose at three different temperatures. The possible explanations for this reduction are discussed

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-299-5
Imprint Title
Ion-solid interactions for materials modification and processing
Imprint Pagination
923 p.
Series
Materials Research Society symposium proceedings, Volume 396.
Journal Page Range
p. 167-172.

Conference

Title
Fall meeting of the Materials Research Society (MRS).
Dates
27 Nov - 1 Dec 1995.
Place
Boston, MA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
28049033
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ARSENIC IONS; BORON; CRYSTAL DEFECTS; DIFFUSION; EXPERIMENTAL DATA; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; SILICON
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; DATA; ELEMENTS; INFORMATION; IONS; NUMERICAL DATA; RADIATION EFFECTS; SEMIMETALS

Optional Information

Secondary number(s)
CONF-951155--.