Published March 1975 | Version v1
Journal article

Model of the annealing of defects generated in germanium by γ-ray bombardment

  • 1. A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, Leningrad

Description

no abstract available

Additional details

Publishing Information

Journal Title
Sov. Phys. - Semicond.
Journal Volume
8
Journal Issue
9
Series
Sov. Phys. - Semicond.
Journal Page Range
1144-1147

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
6195790
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CRYSTAL DEFECTS; GAMMA RADIATION; GERMANIUM; PHYSICAL RADIATION EFFECTS
Descriptors DEC
CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; METALS; RADIATION EFFECTS; RADIATIONS