Published 1990 | Version v1
Book Metadata-only

Surface recombination velocity and lifetime in InP measured by transient microwave reflectance

Creators

  • 1. Rensselaer Polytechnic Inst., Troy, NY (USA). Dept. of Electrical, Computer, and Systems Engineering

Description

Minority carrier lifetime and surface recombination velocity are determined in OMVPE InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1 x 106 cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effect of various chemical treatments and SiO on the surface recombination velocity are measured

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
Twenty first IEEE photovoltaic specialists conference 1990 (Conference Record)
Imprint Pagination
1673 p.
Journal Page Range
p. 404-408.

Conference

Title
21. Institute for Electrical and Electronics Engineers (IEEE) photovoltaic specialists conference.
Dates
21-25 May 1990.
Place
Kissimmee, FL (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22053004
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CARRIER LIFETIME; CHEMICAL REACTION KINETICS; DISLOCATION PINNING; EPITAXY; INDIUM PHOSPHIDES; MICROWAVE RADIATION; N-TYPE CONDUCTORS; ORGANOMETALLIC COMPOUNDS; RECOMBINATION; SOLAR CELLS; VELOCITY
Descriptors DEC
DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; EQUIPMENT; INDIUM COMPOUNDS; KINETICS; LIFETIME; MATERIALS; ORGANIC COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; REACTION KINETICS; SEMICONDUCTOR MATERIALS

Optional Information

Secondary number(s)
CONF-900542--.