Published October 2001
| Version v1
Journal article
Some aspects of SiC CVD epitaxy
- 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
Description
A brief comparative analysis of techniques for the CVD epitaxy of SiC is made. Two tendencies in the use of inner reactor equipment are distinguished. Irrespective of the design features and the active gases used, chemical reactions of hydrogen with the interior of the reactor occur concurrently with the epitaxial growth. These reactions control the actual [C]/[Si] ratio in the gas phase and in part determine the background impurity concentration in pure epilayers
Additional details
Identifiers
- DOI
- 10.1134/1.1410646;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 35
- Journal Issue
- 10
- Journal Page Range
- p. 1117-1119
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051903
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; HYDROGEN; SILICON CARBIDES; SILICON COMPOUNDS; VAPOR PHASE EPITAXY
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; ELEMENTS; EPITAXY; NONMETALS; SILICON COMPOUNDS; SURFACE COATING
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 35, 1169-1171 (No. 10, 2001); (c) 2001 MAIK ''Nauka / Interperiodica''.