Published 1996
| Version v1
Journal article
A floating-gate MOSFET gamma dosimeter
- 1. Carleton Univ., Dept. of Electronics, Ottawa, Ontario (Canada)
- 2. National Research Council of Canada, Ottawa, Ontario (Canada)
- 3. Thomson and Nielsen Electronics Ltd., Nepean, Ontario (Canada)
Description
A novel MOSFET-based dosimeter that uses a floating polysilicon gate to trap radiation-generated charge is reported. As in previous MOSFET dosimeters, absorbed dose is inferred from changes in threshold voltage. High sensitivity is obtained by extending the floating gate over the field oxide. Prototype devices have been fabricated in a conventional 5 μm nMOS integrated-circuit technology, and show sensitivities up to 280 mV Gy-1 when irradiated with a 60Co gamma source. (author)
Additional details
Publishing Information
- Journal Title
- Canadian Journal of Physics
- Journal Volume
- 74
- Journal Issue
- suppl.1
- Journal Page Range
- p. S135-S138.
- ISSN
- 0008-4204
- CODEN
- CJPHAD
INIS
- Country of Publication
- Canada
- Country of Input or Organization
- Canada
- INIS RN
- 29030690
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DOSEMETERS; GAMMA DETECTION; MOSFET; RADIATION DOSES; SENSITIVITY ANALYSIS; THRESHOLD DETECTORS
- Descriptors DEC
- DETECTION; FIELD EFFECT TRANSISTORS; MEASURING INSTRUMENTS; MOS TRANSISTORS; NEUTRON DETECTORS; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- 11 refs., 2 tabs., 2 figs.