Monte Carlo calculation of electron impact ionization in bulk InAs and HgCdTe
Creators
- 1. School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0250 (USA)
Description
We present calculations based on an ensemble Monte Carlo simulation of the electron impact ionization rate in bulk InAs and Hg0.70Cd0.30Te at 77 K. The Monte Carlo calculation includes an analytic nonparabolic model of the conduction band, all of the dominant scattering mechanisms, and a nonparametrized model of the impact ionization rate. Calculations are first made of the ionization rate in bulk InAs and are compared to both experiment and previous Monte Carlo investigations. Updated material parameters are used as well as calculated values of the threshold energy and the ionization probability in the InAs simulation. Good agreement with previous Monte Carlo studies is achieved. Using a similar model, the electron ionization rate in bulk Hg0.70Cd0.30Te is studied. To our knowledge, this is the first study either theoretically or experimentally of electron impact ionization in long wavelength (5 μm) band-gap HgCdTe
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 69
- Journal Issue
- 11
- Series
- J. Appl. Phys.
- Journal Page Range
- 7844-7847
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22074189
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM TELLURIDES; ELECTRON COLLISIONS; INDIUM ARSENIDES; IONIZATION; LOW TEMPERATURE; MERCURY TELLURIDES; MONTE CARLO METHOD; SIMULATION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; COLLISIONS; INDIUM COMPOUNDS; MERCURY COMPOUNDS; PNICTIDES; TELLURIDES; TELLURIUM COMPOUNDS