Mechanisms of electron relaxation in n-Bi-Sb semiconductor alloys

The maximum in the dependence of the diffusion thermal electromotive force α22(H) on the magnetic field by H||C3 is observed in the degenerated semiconductor alloys n-Bi-Sb, wherein only L-electrons participate in the transfer processes. The electrons relaxation time was determined by the magnetic field value, corresponding to the diffusion thermal electromotive force maximum. The constituents of the electrons relaxation time by scattering on the phonons, ionized admixtures and the alloy components concentration fluctuations were separated with application of the electrons relaxation time dependences on the temperature, alloy-components and alloying admixtures electrons concentrations. The obtained relaxation times are applied for calculating the theoretical dependences of the thermal electromotive force and the Nernst-Ettingshausen coefficient magnetic field. The satisfactory agreement of the calculation with the experiment is obtained