Published 2018 | Version v1
Book

Enhancement of crossed Andreev reflection in normal-superconductor-normal junction of thin topological insulator

  • 1. Institute of Physics, Bhubaneswar 751 005 (India)

Description

The subgapped transport phenomena through a normal-superconductor-normal (NSN) junction made up of ultra thin topological insulator with proximity induced superconductivity has been explored here. The dimensional crossover from three dimensional (3D) topological insulator (TI) to thin two-dimensional (2D) TI introduces a new degree of freedom, the so-called hybridization or coupling between the two surface states. The role of hybridization in transport properties of the NSN junction, especially how it affects the crossed Andreev reflection (CAR) has been investigated. It has been observed that a rib-like pattern appears in CAR probability profile while examined as a function of angle of incidence and length of the superconductor. Depending on the incoming and reflection or transmission channel, CAR probability can be maneuvered to be higher than 97% under suitable coupling between the two TI surface states along with appropriate gate voltage and doping concentration in the normal region

Part of:
Proceedings of the national conference on quantum condensed matter

Additional details

Publishing Information

Publisher
Indian Institute of Science Education and Research Mohali
Imprint Place
Mohali (India)
Imprint Title
Proceedings of the national conference on quantum condensed matter
Imprint Pagination
375 p.
Journal Page Range
[2 p.]

Conference

Title
national conference on quantum condensed matter
Acronym
QMAT
Dates
25-27 Jul 2018
Place
Mohali (India)

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
51014948
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COUPLING CONSTANTS; CRYSTAL DOPING; N-TYPE CONDUCTORS; PROXIMITY EFFECT; SUPERCONDUCTORS; TOPOLOGY
Descriptors DEC
MATERIALS; MATHEMATICS; SEMICONDUCTOR MATERIALS

Optional Information