Tests of UFXC32k chip with CdTe pixel detector
Creators
- 1. Rigaku Corporation, XRD Design and Engineering Department, 3-9-12 Matsubara-cho, Akishima-shi, Tokyo (Japan)
Description
The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.
Availability note (English)
Available from http://dx.doi.org/10.1088/1748-0221/13/02/C02014Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Instrumentation
- Journal Volume
- 13
- Journal Issue
- 02
- Journal Page Range
- p. C02014
- ISSN
- 1748-0221
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51062690
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CDTE SEMICONDUCTOR DETECTORS; CHARGE COLLECTION; HYBRIDIZATION; KEV RANGE 10-100; LEAKAGE CURRENT; MOLYBDENUM; READOUT SYSTEMS; SENSORS; SI SEMICONDUCTOR DETECTORS; X RADIATION
- Descriptors DEC
- CURRENTS; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; IONIZING RADIATIONS; KEV RANGE; MEASURING INSTRUMENTS; METALS; RADIATION DETECTORS; RADIATIONS; REFRACTORY METALS; SEMICONDUCTOR DETECTORS; TRANSITION ELEMENTS