Auger capture of electrons by an Edge dislocation in semiconductors

The Auger capture of majority carriers by a charged Edge dislocation in n-tyoe semiconductors is considered in the case of weak saturation of dangling bonds existing on the dislocation core. The dependence of the capture radius on the depth of one-dimentional dislocation band and on the temperature is obtained. Values of temperature and free electrons concentration are estimated, when the Auger capture is the dominant mechanism of nonradiative recombination in crystals with dislocations