Adsorption of RuSex (x =1–5) cluster on Se-doped graphene: First principle calculations
Creators
- 1. Department of Physics, Adnan Menderes University, Aydın 09100 (Turkey)
- 2. Department of Physics, Middle East Technical University, Ankara 06800 (Turkey)
Description
Highlights: • Electronic properties of adsorption of RuSex (x =1–5) cluster on Se-doped graphene are investigated. • It is found that RuSe, RuSe4, RuSe5 adsorbate make substrate metallic. • RuSe2 makes it half metallic and RuSe3 makes semiconductor. - Abstract: We have investigated the adsorption of RuSex (x =1–5) cluster on Se-doped graphene. The change of the adsorption energy with the number of Se atoms and magnetization values are investigated. Electronic properties of adsorption of RuSex (x =1–5) cluster on Se-doped graphene are investigated. The highest adsorption energy belongs to RuSe adsorbate. The biggest magnetization value belongs to RuSe2 adsorbate. This adsorbate makes the substrate half metallic. This property is important in electronic device applications. It is observed that substitutional Se atom changes the electronic properties of graphene. This substitution makes graphene metallic. While RuSe, RuSe4, RuSe5 adsorbate make substrate metallic, RuSe3 makes it semiconducting. Generally, it is found that there is a charge transfer from the substrate to clusters within the Löwdin analysis. This is in line with the charge difference results
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2015.04.124Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2015.04.124;
- PII
- S0169-4332(15)00974-5;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 347
- Journal Page Range
- p. 808-815
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47038013
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ADSORPTION; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRONIC EQUIPMENT; GRAPHENE; MAGNETIZATION; RUTHENIUM COMPOUNDS; SELENIUM ADDITIONS; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SUBSTRATES
- Descriptors DEC
- ALLOYS; CALCULATION METHODS; CARBON; ELEMENTS; EQUIPMENT; MATERIALS; NONMETALS; REFRACTORY METAL COMPOUNDS; SELENIUM ALLOYS; SORPTION; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.