Published March 9, 1987
| Version v1
Journal article
Influence of fast neutrons on electrical properties in neutron transmutation doped GaAs: New annealing stage
Creators
- 1. College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan
Description
In neutron transmutation doping (NTD) to the undoped semi-insulating GaAs, a new annealing stage related to the tunneling assisted hopping conduction was found around 400 0C for fast neutron fluences of ≥7.0 x 1017 n/cm2. It is suggested that this stage is based on the enhancement in the hopping conduction by the activated dopant in the NTD process. The stage was not observed for the irradiation with a small amount of fast neutrons. The activation energy for the annihilation of As antisite defects (As/sub Ga/) was found to be 0.9 eV. The annealing temperature to achieve the desired carried concentration increased with the fast neutron fluence
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 50
- Journal Issue
- 10
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 580-582
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18055843
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; CARRIER DENSITY; CRYSTAL DEFECTS; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; HIGH TEMPERATURE; NEUTRON FLUENCE; NEUTRONS; PHYSICAL RADIATION EFFECTS; TRANSMUTATION; TUNNEL EFFECT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BARYONS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ENERGY; FERMIONS; GALLIUM COMPOUNDS; HADRONS; HEAT TREATMENTS; NUCLEONS; PHYSICAL PROPERTIES; RADIATION EFFECTS