Radiation test guidelines for digital microcircuits

The objective of this paper is to provide an overview of radiation test guidelines for digital microcircuits. These guidelines are based on recommended semiconductor test methods and on radiation test procedures formulated for use by developers of hardened very-large-scale interaction devices. Since the static random access memory (SRAM) is widely used as a technology demonstration chip and radiation test vehicle, the SRAM is used as a representative example of the device under test. These guidelines are discussed for each of four main radiation threat or test environments, neutron fluence, total ionizing dose, ionizing dose rate (upset, latchup, and survivability), and single-event upset