Published May 14, 2010 | Version v1
Journal article

Core level photoelectron spectroscopy of LiGaS2 and Ga-S bonding in complex sulfides

  • 1. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, 13, Lavrentieva Ave., Novosibirsk 90, 630090 (Russian Federation)
  • 2. Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 90, 630090 (Russian Federation)
  • 3. Laboratory of Physical Bases of Integrated Microelectronics, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation)

Description

The electronic parameters of the lithium thiogallate LiGaS2 have been evaluated by X-ray photoelectron spectroscopy (XPS). Spectral features of all constituent element core levels and Auger lines have been considered. The Ga-S bonding effects in Ga-bearing sulfide crystals have been discussed using binding energy difference Δ2p(S-Ga) = BE(S 2p) - BE(Ga 3d) as a representative parameter to quantify the valence electron shift from gallium to sulfur atoms. The value Δ2p(S-Ga) = 141.9 eV found for LiGaS2 is very close to that evaluated for AgGaS2. This relation is an indicator of closely coincident ionicity of Ga-S bonds in LiGaS2 and AgGaS2.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2010.03.020

Additional details

Identifiers

DOI
10.1016/j.jallcom.2010.03.020;
PII
S0925-8388(10)00500-1;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
497
Journal Issue
1-2
Journal Page Range
p. 244-248
ISSN
0925-8388
CODEN
JALCEU

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.