Published 2003
| Version v1
Miscellaneous
Correlation between nitrogen incorporation and optical quality in MOCVD-grown Ga(In)NAs investigated by photoluminescence and modulation spectroscopy
Creators
- 1. Institute of Physics, Wroclaw University of Technology, Wroclaw (Poland)
- 2. Department of Information Technology, Ghent University (INTEC), Gent (Bulgaria)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting
- Imprint Pagination
- 287 p.
- Journal Page Range
- p. 116
Conference
- Title
- European Materials Conference E-MRS 2003 Fall Meeting
- Dates
- 15-19 Sep 2003
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 35101145
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ARSENIDES; CHEMICAL COMPOSITION; CHEMICAL VAPOR DEPOSITION; ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; FABRICATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LINE BROADENING; NANOSTRUCTURES; NITRIDES; OPTIMIZATION; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM MECHANICS; SEMICONDUCTOR MATERIALS; SPECTRAL REFLECTANCE; SPECTRAL SHIFT
- Descriptors DEC
- ARSENIC COMPOUNDS; CHEMICAL COATING; DEPOSITION; EMISSION; LUMINESCENCE; MATERIALS; MECHANICS; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; ORGANIC COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SURFACE COATING