Concentrations of radiation defects during irradiation of Si by fast particles

Full text :Semiconductor materials and devices are very sensitive to the effects of nuclear radiation. The cause of radiation effects in semiconductors is the occurrence of structural defects, and sometimes the appearance of new impurities in the crystals. The essential changes of resulting ionization are appearance of charge carrier-electrons and holes, due to absorption of radiation energy by the crystal, as well as the bombing of fast particles. Under these conditions, many parameters and characteristics of materials and devices are changed, which leads to failure of the device or to significantly reduce their lifetime. To solve this problem requires a detailed study of the physical properties of materials before irradiation, during irradiation and after it, which should allow understanding the formation and nature of radiation defects introduced by irradiation structure. In this work it was proposed a model for defining the threshold energy, the total cross section of displaced atoms and the concentration of radiation defects in semiconductors irradiated by c-centered cubic lattice. The figures show the cross section of displaced atoms and the concentration of radiation defects on the energy of accelerated electrons.