Published September 2003
| Version v1
Journal article
Nonparabolic conduction subbands in nanoscale InGaAs/InAlAs quantum wells with photocurrent and transmission spectroscopy
- 1. Kyushu Institute of Technology, Fukuoka (Japan)
- 2. Hitachi Cable Ltd., Ibaragi (Japan)
Description
Optical interband transitions of modulation-doped In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells were clearly observed in the photocurrent and the transmission spectra. The steps of the transitions coincided between the two spectra. The effective masses of the conduction subbands were estimated in fitting the transition energies to an effective mass equation. The masses agreed with the values determined on our previous work with undoped In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells. The effective mass normal to the quantum well plane was more than 50 % heavier than the bulk band-edge mass of InGaAs
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 39
- Journal Issue
- 3
- Series
- 10 refs, 5 figs
- Journal Page Range
- p. 469-472
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 35045459
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; EFFECTIVE MASS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; QUANTUM WELLS; SPECTROSCOPY; TRANSMISSION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CURRENTS; ELECTRIC CURRENTS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MASS; NANOSTRUCTURES; PNICTIDES