Published March 1988
| Version v1
Journal article
The influence of silicon dioxide interface charges on the design of semiconductor detectors
Description
Published in summary form only
Additional details
Additional titles
- Original title (German)
- Der Einfluss von Grenzflaecheneffekten auf das Design von Halbleiterdetektoren
Publishing Information
- Journal Title
- Verh. Dtsch. Phys. Ges.
- Journal Volume
- 23
- Journal Issue
- 5
- Series
- Verh. Dtsch. Phys. Ges.
- Journal Page Range
- T357
- ISSN
- 0420-0195
- CODEN
- VDPEA
Conference
- Title
- Joint spring meeting of the sections Teilchenphysik of Deutsche Physikalische Gesellschaft e.V. (DPG), the Oesterreichische Physikalische Gesellschaft (OePG) and the Schweizerische Physikalische Gesellschaft (SPG).
- Original Conference Title
- Gemeinsame Fruehjahrstagung der Sektionen Teilchenphysik der Deutschen Physikalischen Gesellschaft e.V. (DPG), der Oesterreichischen Physikalischen Gesellschaft (OePG) und der Schweizerischen Physikalischen Gesellschaft (SPG)
- Dates
- 16-18 Mar 1988.
- Place
- Freiburg im Breisgau (Germany, F.R.).
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 19046676
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHARGE-COUPLED DEVICES; ELECTRICAL PROPERTIES; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; P-N JUNCTIONS; POSITION SENSITIVE DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SI SEMICONDUCTOR DETECTORS; SILICON; SILICON OXIDES; SPACE CHARGE
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; MATERIALS; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS