Published August 16, 1987
| Version v1
Journal article
Defect characteristics in different crystallographic directions in Cz-Si as a function of doping and annealing
Creators
- 1. Technische Univ., Graz (Austria). Inst. fuer Kernphysik
- 2. Winnipeg Univ., Manitoba (Canada). Dept. of Physics
Description
Measurements of the S-parameter as well as of lifetimes are performed as a function of thermal annealing in the 20 to 1100 0C range. Cz-Si with different levels of boron doping is investigated. A significant broadening of the annihilation line is found around 800 0C for the heavily doped sample. Concurrent with this a short-lived (∼ 100 ps) lifetime component is observed with an intensity up to 30%. No obvious changes in the anisotropy of the annihilation line take place. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 102
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 527-531
- ISSN
- 0031-8965
- CODEN
- PSSAB
Conference
- Title
- European meeting on positron studies of defects.
- Dates
- 23-27 Mar 1987.
- Place
- Wernigerode (German Democratic Republic).
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 19006618
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ANNIHILATION; BORON COMPOUNDS; CRYSTAL DEFECTS; DOPED MATERIALS; DOPPLER BROADENING; ELECTRON-POSITRON INTERACTIONS; LIFETIME; ORIENTATION; POSITRONS; SILICON
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HEAT TREATMENTS; INTERACTIONS; LEPTON-LEPTON INTERACTIONS; LEPTONS; LINE BROADENING; MATERIALS; MATTER; PARTICLE INTERACTIONS; SEMIMETALS