Published December 17, 2012
| Version v1
Journal article
Ion-induced grain growth and texturing in refractory thin films—A low temperature process
Creators
- 1. Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, 8093 Zurich (Switzerland)
Description
Selective grain growth can be promoted in thin films independently of the materials intrinsic properties, such as the melting temperature, by ion-irradiation. This enables the previously impossible evolution of large grain-sized microstructures with controlled crystallographic textures even in refractory metals, such as α-tantalum. Experimental results from materials with different crystal structure are compared on the basis of a theoretical model, which reveals the differences in ion-induced grain-growth dynamics.
Additional details
Identifiers
- DOI
- 10.1063/1.4772640;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 101
- Journal Issue
- 25
- Journal Page Range
- p. 251905-251905.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44048351
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BASES; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; EVOLUTION; GRAIN GROWTH; GRAIN SIZE; ION BEAMS; IRRADIATION; MATERIALS; MELTING POINTS; REFRACTORIES; TANTALUM; TEXTURE; THIN FILMS
- Descriptors DEC
- BEAMS; ELEMENTS; FILMS; METALS; MICROSTRUCTURE; PHYSICAL PROPERTIES; REFRACTORY METALS; SIZE; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS; TRANSITION TEMPERATURE
Optional Information
- Notes
- (c) 2012 American Institute of Physics