Published December 17, 2012 | Version v1
Journal article

Ion-induced grain growth and texturing in refractory thin films—A low temperature process

  • 1. Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, 8093 Zurich (Switzerland)

Description

Selective grain growth can be promoted in thin films independently of the materials intrinsic properties, such as the melting temperature, by ion-irradiation. This enables the previously impossible evolution of large grain-sized microstructures with controlled crystallographic textures even in refractory metals, such as α-tantalum. Experimental results from materials with different crystal structure are compared on the basis of a theoretical model, which reveals the differences in ion-induced grain-growth dynamics.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
101
Journal Issue
25
Journal Page Range
p. 251905-251905.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44048351
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BASES; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; EVOLUTION; GRAIN GROWTH; GRAIN SIZE; ION BEAMS; IRRADIATION; MATERIALS; MELTING POINTS; REFRACTORIES; TANTALUM; TEXTURE; THIN FILMS
Descriptors DEC
BEAMS; ELEMENTS; FILMS; METALS; MICROSTRUCTURE; PHYSICAL PROPERTIES; REFRACTORY METALS; SIZE; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS; TRANSITION TEMPERATURE

Optional Information

Notes
(c) 2012 American Institute of Physics