Published October 1, 2010
| Version v1
Journal article
Effect of Fe diffusion in MgO/Fe seedlayers to attain (100) oriented Pt underlayer for perovskite films with c-axis orientation
- 1. Department of Physical and Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)
- 2. Panasonic Electronic Devices Co., Ltd. 1006, Kadoma, Kadoma City, Osaka, 571-8506 (Japan)
Description
(100) oriented Platinum (Pt) thin films can be grown on MgO(100)/Fe buffer layers at a substrate temperature above 350 oC by using facing-targets sputtering (FTS) method. A diffusion of Fe atom from the Fe bottom layer to the top of the MgO layer was observed at a substrate temperature above 350 oC. Platinum layer with (100) preferred orientation can be grown above 250 oC by using a process which enhances the diffusion of Fe.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2010.03.099Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2010.03.099;
- PII
- S0040-6090(10)00425-6;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 518
- Journal Issue
- 24
- Journal Page Range
- p. e146-e148
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- Taiwan Association for Coatings and Thin Films Technology international thin films conference
- Acronym
- TACT 2009
- Dates
- 14-16 Dec 2009
- Place
- Taipei, Taiwan (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42067173
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DIFFUSION; GRAIN ORIENTATION; IRON; LAYERS; MAGNESIUM OXIDES; PEROVSKITE; PLATINUM; SPUTTERING; TEMPERATURE RANGE 0400-1000 K; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; ELEMENTS; FILMS; MAGNESIUM COMPOUNDS; METALS; MICROSTRUCTURE; MINERALS; ORIENTATION; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PEROVSKITES; PLATINUM METALS; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.